Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2006-03-10
2010-06-08
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C257SE21304, C356S237200
Reexamination Certificate
active
07732332
ABSTRACT:
The invention is directed to a chemical mechanical polishing process. The chemical mechanical polishing process comprises steps of providing a wafer disposed at a wafer handling region of a chemical mechanical polishing apparatus and then moving the wafer into a buffer region of the chemical mechanical polishing apparatus. A first detecting process is performed for obtaining a pre-polishing condition of the wafer by using a detector in the buffer region and the wafer is moved into a chemical mechanical polishing region and performing a chemical mechanical process. A second detecting process is performed, in the buffer region, for obtaining a post-polishing condition of the wafer by using the detector of the buffer region.
REFERENCES:
patent: 2002/0107155 (2002-08-01), Miller et al.
patent: 2007/0122921 (2007-05-01), Shanmugasundram et al.
patent: 2007/0281587 (2007-12-01), Wiswesser et al.
patent: 1017090 (2000-07-01), None
Jianq Chyun IP Office
Smith Matthew
Swanson Walter H
United Microelectronics Corp.
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