Chemical mechanical polishing method suitable for highly accurat

Abrading – Abrading process – Utilizing fluent abradant

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

451 41, 451 59, 216 88, 438692, B24B 100

Patent

active

06132292&

ABSTRACT:
A method of forming interconnection layers within grooves of an insulating layer. The method includes the steps of: forming grooves in an upper portion of an insulating layer; depositing a conductive layer over a surface of the insulating layer and also within the grooves; and subjecting the conductive layer to a chemical mechanical polishing for polishing the conductive layer, so as to leave the conductive layer only within the grooves, thereby forming interconnection layers in the grooves. The chemical mechanical polishing is carried out by use of a polishing pad having a polyurethane foam polishing pad surface at a down pressure of no more than 420 gwt/cm.sup.2.

REFERENCES:
patent: 5899792 (1999-05-01), Yagi
patent: 5916016 (1999-06-01), Bothra
patent: 5924916 (1999-06-01), Yamashita
patent: 5976000 (1999-11-01), Hudson

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Chemical mechanical polishing method suitable for highly accurat does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Chemical mechanical polishing method suitable for highly accurat, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polishing method suitable for highly accurat will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-463088

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.