Method for the production of semiconductor devices

Details Method for the production of semiconductor devices Method for the production of semiconductor devices

1986-01-06

1987-12-29

Ozaki, George T.

Fishing, trapping, and vermin destroying

437120, 437129, 437130, 437133, H01L 21208

Patent

active

047161299

ABSTRACT:
A method for the production of semiconductor devices, using liquid phase epitaxy of semiconductors of Groups III to V of the periodic table, in which on a Te-doped first layer, a second layer having a polarity different from that of the first layer is grown, wherein a non-Te-doped third layer having the same polarity as the first layer is grown between the first layer and the second layer. Another method in which on a Te-doped first layer, a second layer having a principal crystal composition different from that of the first layer is grown, wherein a non-Te-doped third layer having the same principal crystal composition of the first layer is grown between the first layer and the second layer.

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