Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2007-09-04
2007-09-04
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S693000
Reexamination Certificate
active
11268961
ABSTRACT:
Disclosed herein is a chemical mechanical polishing (CMP) method for manufacturing a semiconductor device, comprising performing partial ion implantation of dopants at different concentrations into a plurality of at least two divided regions of a wafer having a planarization-target film, and subjecting the partially ion implanted-wafer to a chemical mechanical polishing process. In accordance with the present invention, non-uniformity of the removal rate in a chemical mechanical polishing process is countervailed by dopants which are implanted at different concentrations via partial ion implantation, and thereby it is possible to polish the target film at a uniform removal rate.
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Choi Yong Soo
Lee Won Mo
Deo Duy-Vu N.
Hynix / Semiconductor Inc.
Marshall & Gerstein & Borun LLP
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