Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-11-27
2007-11-27
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S690000, C438S691000, C438S692000, C438S693000, C051S298000, C051S307000, C051S308000, C051S309000
Reexamination Certificate
active
11077671
ABSTRACT:
A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.
Ghosh Tirthankar
Weinstein Barry
Biederman Blake T.
Deo Duy-Vu N.
George Patricia A.
Rohm and Haas Electronic Materials CMP Holdings Inc.
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