Chemical mechanical polishing compositions and methods...

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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C438S690000, C438S691000, C438S692000, C438S693000, C051S298000, C051S307000, C051S308000, C051S309000

Reexamination Certificate

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11077671

ABSTRACT:
A method for chemical mechanical polishing of semiconductor substrates containing a metal layer requiring removal and metal interconnects utilizing a composition containing engineered copolymer molecules comprising hydrophilic functional groups and relatively less hydrophilic functional groups; the engineered copolymer molecules enabling contact-mediated reactions between the polishing pad surface and the substrate surface during CMP resulting in minimal dishing of the metal interconnects in the substrate.

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