Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1999-02-18
2000-11-07
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438691, 438692, 438693, H01L 21304
Patent
active
061436623
ABSTRACT:
The present invention provides a chemical mechanical polishing method for the planarization of shallow trench isolation structure and other integrated circuit structures. The method of the invention comprises the steps of providing a substrate having a plurality of patterned regions and polishing the substrate with a chemical mechanical polishing slurry comprising small abrasive particles having a mean diameter of between about 2 and 30 nm and large abrasive particles having a mean diameter of between 2 and 10 times larger than the mean diameter of the small abrasive particles. The chemical mechanical polishing slurries can also include viscosity additives and etchants for use in the invention.
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Rhoades Robert L.
Roberts Robert C.
Yancey Paul J.
Benson Kenneth A.
Kaeding Konrad
Rodel Holdings Inc.
Tran Binh X.
Utech Benjamin L.
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