Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1997-10-20
1999-04-27
Jones, Deborah
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438691, 438692, 106 3, 106 11, 51304, 51306, 51309, B24B 100
Patent
active
058973753
ABSTRACT:
A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.
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Bajaj Rajeev
Cook Lance B.
Dang Chelsea
Das Sanjit
Farkas Janos
Jones Deborah
Motorola Inc.
Witek Keith E.
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