Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-04-22
2008-04-22
Ahmed, Shamim (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S720000, C438S724000, C356S030000, C356S038000, C356S328000, C356S390000, C451S006000
Reexamination Certificate
active
07361601
ABSTRACT:
A method for improving accuracy of determining polish endpoint of chemical mechanical polish (CMP) process is provided. The method is performed before the CMP process. First, a test wafer with a to-be-polished layer and a material layer under the to-be-polished layer is provided. Then, a test beam with a wavelength is provided to irradiate the test wafer. The CMP process is performed to the test wafer to remove the to-be-polished layer until the material layer is exposed while the reflection of the test beam during the polish process is continuously detected. The reflection tendency is detected when the to-be-polished layer is to be completely removed and when the CMP process reaches the interface between the to-be-polished layer and the material layer. If the reflection tendency is gradually weakened, the test beam with the wavelength is chosen for the subsequent polish process.
REFERENCES:
patent: 6153116 (2000-11-01), Yang et al.
patent: 6280289 (2001-08-01), Wiswesser et al.
patent: 6287879 (2001-09-01), Gonzales et al.
patent: 6476921 (2002-11-01), Saka et al.
patent: 6652355 (2003-11-01), Wiswesser et al.
patent: 2003/0190864 (2003-10-01), Lehman et al.
S. Wolf, Silicon Processing for VLSI Era, vol. 4, Lattice Press (2002), pp. 385-389.
Chen Chun-Fu
Huang Chi-Tung
Huang Chun-Chung
Hung Yung-Tai
Ahmed Shamim
Angadi Maki
Jianq Chyun IP Office
Macronix International Co. Ltd.
LandOfFree
Chemical mechanical polish process and method for improving... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Chemical mechanical polish process and method for improving..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Chemical mechanical polish process and method for improving... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2760550