Chemical/mechanical polish (CMP) thickness monitor

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451 5, 451 6, 451 7, 451 8, 451287, 451288, 451289, 451 41, 451 53, B24B 4900, B24B 5100

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active

056430507

ABSTRACT:
An improved and new process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the removed layer thickness is detected, in-situ, without necessity to remove the substrate from the polishing apparatus has been developed. The method comprises monitoring the temperature of the polishing pad or the polished substrate versus polishing time, integrating the polishing temperature change versus polish time curve with polish time, and applying computer stored integration coefficients to the integrated area to derive the removed thickness.

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