Chemical/mechanical polish (CMP) endpoint method

Details Chemical/mechanical polish (CMP) endpoint method Chemical/mechanical polish (CMP) endpoint method

1996-04-01

1997-07-15

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566261, 216 84, 216 88, 216 89, 216 38, 437 8, 437225, H01L 2166

Patent

active

056479522

ABSTRACT:
An improved and new process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the endpoint for the planarization process is detected by monitoring the temperature of the polishing pad with an infrared temperature measuring device, has been developed. The process allows endpoint detection in-situ at the polishing apparatus, when polishing to remove a first layer of material and to stop the removal process when a second layer of material is exposed.

REFERENCES:
patent: 5078801 (1992-01-01), Malik
patent: 5196353 (1993-03-01), Sandhu et al.
patent: 5234868 (1993-08-01), Cote
patent: 5240552 (1993-08-01), Yu et al.
patent: 5272117 (1993-12-01), Roth et al.
patent: 5308438 (1994-05-01), Cote et al.
patent: 5337015 (1994-08-01), Lustig et al.
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5413941 (1995-05-01), Koos et al.
patent: 5514616 (1996-05-01), Rostoker et al.
patent: 5516346 (1996-05-01), Cadien et al.
patent: 5527423 (1996-06-01), Neville et al.
patent: 5550078 (1996-08-01), Sung

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