Chemical/mechanical planarization (CMP) apparatus and polish met

Abrading – Abrading process – Glass or stone abrading

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451285, 451 36, 216 88, 1566361, B24B 100

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active

055757065

ABSTRACT:
An improved and new apparatus and process for chemical/mechanical planarization (CMP) of a substrate surface, wherein the slurry concentration between the wafer and polishing pad is controlled through the application of an electric field between the wafer carrier and polishing platen, has been developed. The result is an increased polish removal rate and better uniformity of the planarization process.

REFERENCES:
patent: 4821466 (1989-04-01), Kato et al.
patent: 5023203 (1991-07-01), Doy et al.
patent: 5078801 (1992-01-01), Malik
patent: 5234867 (1993-08-01), Schultz et al.
patent: 5240552 (1993-08-01), Yu et al.
patent: 5272117 (1993-12-01), Roth et al.
patent: 5449313 (1995-09-01), Kordonsky et al.
patent: 5492594 (1996-02-01), Burke et al.

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