Chemical-mechanical alignment mark and method of fabrication

Details Chemical-mechanical alignment mark and method of fabrication Chemical-mechanical alignment mark and method of fabrication

1994-07-15

1996-04-02

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

430327, 148DIG102, 156625, 437924, 216 39, H01L 21302, H01L 21304

Patent

active

055039626

ABSTRACT:
A method for forming an alignment mark during semiconductor device manufacturing. A first alignment mark having a first step height is formed in a semiconductor substrate. An interlayer dielectric is formed over the alignment mark and planarized to a first thickness. During contact/via etch an opening is formed through the first dielectric layer away from the first alignment mark. The opening is then filled with a material until the material in the bottom of the opening has a thickness less than thickness of the planarized dielectric layer.

REFERENCES:
patent: 4573257 (1986-03-01), Hulseweh
patent: 5294556 (1994-03-01), Kawamura
patent: 5316966 (1994-05-01), Van Der Plas et al.

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