Chemical etching of transformed structures

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156603, 156643, 156656, 156657, 156662, 156DIG64, 156DIG80, 156DIG111, 427 86, C23F 102, B44C 122, C03C 1500, H01L 21306

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active

044500416

ABSTRACT:
A maskless technique is disclosed for shaping semiconductor materials by ming areas that are selectively etchable with respect to the rest of the structure. In one embodiment of this invention, a body of amorphous material is subjected to radiation by a focused energy beam so as to convert a predetermined region of the amorphous material into a region of crystalline material. The converted region etches at a slower rate than the non-converted amorphous material. In a second embodiment of the present invention, a method of selectively etching a metal is disclosed which includes the step of subjecting a predetermined region of the metal to be impinged upon by a shaped ion beam so as to ion implant the predetermined region. A chemical etch is applied to the metal and to the ion implanted region of the metal and the ion implanted region etches at a slower rate than the portion of the metal outside the ion implanted region. In another embodiment of the present invention, a method of selectively etching a dielectric is disclosed which includes the step of subjecting a predetermined region of the dielectric to be impinged upon by a shaped ion beam so as to ion implant the predetermined region. A chemical etch is applied to the dielectric and to the ion implanted region of the metal and the ion implanted region etches at a faster rate than the portion of the dielectric outside the ion implanted region.

REFERENCES:
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patent: 3666548 (1972-05-01), Brack et al.
patent: 3682729 (1972-08-01), Gukelberger et al.
patent: 3769109 (1973-10-01), MacRae et al.
patent: 3853648 (1974-12-01), Janus et al.
patent: 4319954 (1982-03-01), White

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