Chemical etching of a semiconductive wafer by undercutting an et

Details Chemical etching of a semiconductive wafer by undercutting an et Chemical etching of a semiconductive wafer by undercutting an et

1983-12-01

1986-06-24

Kimlin, Edward

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156657, 156628, 156648, 156662, 338 4, 338 42, 29610SG, 29580, 73514, H01L 21306, G01L 122

Patent

active

045970033

ABSTRACT:
Three dimensional single crystalline structures, such as folded cantilever beams supported from a frame and supporting a central structure free to move relative to the frame, are fabricated by anisotropically etching through openings in etch stop layers on opposite sides of the substrate wafer. The openings are patterned and aligned so that the etch stop layers are undercut to define etch stop portions interconnected by unetched substrate material.

REFERENCES:
patent: 3616348 (1971-10-01), Greig
patent: 3689389 (1972-09-01), Waggener
patent: 3853650 (1974-12-01), Hartlaub
patent: 3912563 (1975-10-01), Tomioka et al.
patent: 4071838 (1978-01-01), Block
patent: 4144516 (1979-03-01), Aine
patent: 4293373 (1981-10-01), Greenwood

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