Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2007-05-29
2007-05-29
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S396000, C257SE21008
Reexamination Certificate
active
10450318
ABSTRACT:
The present invention provides an electrolytic capacitor that operates stably even when used for a long period of time under severe conditions, and forms an intermediate composition portion of metal and oxide within a chemical conversion film to a thickness of 40 nm or more so as to suppress the migration of oxygen atoms within a chemical conversion film of a valve metal. This intermediate composition portion is obtained by subjecting a base metal comprised by containing nitrogen in a valve action metal to anodic oxidation treatment.
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D. M. Smyth et al. “Heat-Treatment of Anodic Oxide Films on Tantalum” Journal of the Electrochemical Society, Dec. 1963, vol. 110, No. 12, pp. 1264-1271.
J. S. L. Leach et al. “Crystallization in Anodic Oxide Films”, Corrosion Science, 1988, vol. 28, No. 1, pp. 43-56.
Horio Isayuki
Izumi Tomoo
Cabot Supermetals K.K.
Chaudhari Chandra
Kilyk & Bowersox P.L.L.C.
Yevsikov Victor V.
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