Chemical beam epitaxy system

Details Chemical beam epitaxy system Chemical beam epitaxy system

1986-11-26

1989-11-07

Bueker, Richard

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156DIG70, 156DIG103, 118723, 118724, 118725, C23C 1600

Patent

active

048789895

ABSTRACT:
Preferred embodiments include a chemical beam epitaxy system (30) with cells for Group III compounds (44) and Group V compounds (40) for epitaxial growth of III-V semiconductor materials on a substrate (38) together with an atomic hydrogen cell (42) for scavenging carbonaceous residues during the chemical beam epitaxy growth to prevent incoporation of carbon impurities in the growing epilayer.

REFERENCES:
patent: 3801366 (1974-04-01), Lemelson
patent: 4051382 (1977-09-01), Ogawa
patent: 4239584 (1980-12-01), Chang et al.
patent: 4522674 (1985-06-01), Ninomiya
patent: 4636268 (1987-01-01), Tsang
Tsang, W. T., "Chemical Beam Epitaxy of InP and GaAs," Appl. Phys. Lett., vol. 45, No. 11 (Dec. 1, 1984) pp. 1234-1236.
Brodsky et al., IBM Tech. Dis. Bull., vol. 22, No. 8A, Jan. 1980.
Parker, The Technology and Physics of Molecular Beam Epitaxy, .COPYRGT.1985, Plenum Press, N.Y., p. 31.

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