Chemical amplification photoresist comprising a reverse reaction

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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G03F 7039

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active

060905220

ABSTRACT:
The inhibition of reverse reactions of a protecting group elimination reaction, to thereby increase the dissolution contrast and resolution, is considered. The disclosed chemical amplification photoresist includes a base resin which is insoluble in a basic developer in the state in which a protecting group is attached to a predetermined site thereof but is soluble in the basic developer in the state in which the protecting group is eliminated therefrom, a photochemical acid generator which generates a hydrogen ion upon exposure to light, and a reverse reaction inhibitor. The reaction of a hydrogen ion generated by the photochemical acid generator with the base resin eliminates the protecting group, which renders the base resin soluble in the basic developer, with concomitant generation of a new hydrogen ion, so that solubilization of the photoresist in the basic developer is amplified. The reverse reaction inhibitor inhibits recombination of the eliminated protecting group with the base resin.

REFERENCES:
patent: 4491628 (1985-01-01), Ito et al.
"Effects of Deprotected Species on Chemically Amplified Resist Systems", Ota, T. et al., SPIE, 2195, Feb.-Mar. 1994, 74-83.
"Chemical Amplification Positive Deep UV Resist Using Partially Tetrahydropyranyl-Protected Polyvinylphenol", by Takashi Hattori, et al., SPIE, vol. 1925, pp. 146-154, 1993.
"Time delay effect on a posiitve deep UV resist using partially tetrahydropyranyl-protected polyvinylphenol", by Takashi Hattori, et al., Journal of Photopolymer Science and Technology, vol. 6, No. 4, (1993), pp. 497-504.

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