Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2005-09-06
2005-09-06
Berman, Jack I. (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492220
Reexamination Certificate
active
06940080
ABSTRACT:
A charged particle beam lithography system includes a charged particle beam emitter which emits a charged particle beam to a wafer at an acceleration voltage lower than a voltage causing a proximity effect; an illumination optical system which adjusts a beam radius of the charged beam; a cell aperture having a cell pattern corresponding to a desired pattern to be written; a first deflector which deflects the charged particle beam with a first electric field to enter a desired cell pattern of the cell aperture; a demagnification projection optical system which demagnifies the charged particle beam form the cell aperture with a second electric field to form an image on the wafer; and a second deflector which deflects the charged particle beam from the cell aperture with a third electric field to adjust an irradiation position of the charged particle beam on the wafer.
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Ando Atsushi
Hashimoto Susumu
Nagano Osamu
Yamazaki Yuichiro
Berman Jack I.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
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