Charged particle beam lithography system and method for...

Details Charged particle beam lithography system and method for... Charged particle beam lithography system and method for...

2007-09-14

2010-11-16

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492210, C250S3960ML

Reexamination Certificate

active

07834333

ABSTRACT:
In the charged particle beam lithography system, a pattern area to be drawn is divided into a plurality of frames, a main deflection positions a charged particle beam to a subfield within the frame, and an auxiliary deflection draws a pattern in units of the subfield. The charged particle beam lithography system includes a beam optical system including a deflector deflecting the beam, a driver driving the deflector, and a deflection control portion controlling the driver according to drawing data indicating a pattern to be drawn. The deflection control portion controls the driver according to a settling time that is determined so that an offset of an irradiation position of the charged particle beam has a certain value irrespective of any changes in deflection amount of the auxiliary deflection in the subfield.

REFERENCES:
patent: 6472672 (2002-10-01), Muraki
patent: 7026106 (2006-04-01), Chang
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patent: 2003/0160192 (2003-08-01), Inanami et al.
patent: 2004/0117757 (2004-06-01), Inanami et al.
patent: 2005/0061981 (2005-03-01), Allen et al.
patent: 2006/0289797 (2006-12-01), Inanami et al.
patent: 2007/0278418 (2007-12-01), Zani et al.

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