Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1992-03-13
1993-11-09
Dzierzynski, Paul M.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250348, H01J 37302
Patent
active
052605795
ABSTRACT:
A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.
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Fueki Shunsuke
Kai Jun-ichi
Kawashima Ken'ichi
Oae Yoshihisa
Sakamoto Kiichi
Dzierzynski Paul M.
Fujitsu Limited
Nguyen Kiet T.
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