Charged particle beam exposure method and apparatus therefor

Details Charged particle beam exposure method and apparatus therefor Charged particle beam exposure method and apparatus therefor

1996-10-02

1999-11-09

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250398, H01J 3730

Patent

active

059819600

ABSTRACT:
A charged particle beam exposure method and apparatus, in which a charged particle beam is shaped based on pattern data and the shaped charged particle beam is irradiated to a desired location on a sample. The method and apparatus includes introducing ozone gas into a chamber through which the charged particle beam is passed, shaped and deflected, to be irradiated to the desired location while the charged particle beam is irradiated through the chamber. The ozone gas concentration in the chamber is maintained so that the concentration downstream along the beam is higher than the concentration upstream along the beam. A charge-up drift due to a contamination material from a resist on a wafer can be avoided by the ozone self cleaning. The ozone oxidation does not occur at the upstream chamber where there is a lower ozone concentration and lower contamination.

REFERENCES:
patent: 5312519 (1994-05-01), Sakai et al.
patent: 5539211 (1996-07-01), Ohtoshi et al.

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