Charged particle beam apparatus and sample manufacturing method

Radiant energy – Inspection of solids or liquids by charged particles

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C250S309000, C250S310000

Reexamination Certificate

active

07928377

ABSTRACT:
It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.

REFERENCES:
patent: 3626184 (1971-12-01), Crewe
patent: 5525806 (1996-06-01), Iwasaki et al.
patent: 5616921 (1997-04-01), Talbot et al.
patent: 5952658 (1999-09-01), Shimase et al.
patent: 5986264 (1999-11-01), Grunewald
patent: 6039000 (2000-03-01), Libby et al.
patent: 6452172 (2002-09-01), Oi
patent: 63-18763 (1988-02-01), None
patent: 6-231719 (1994-08-01), None
patent: 6-231720 (1994-08-01), None
patent: 6-231720 (1994-08-01), None
patent: 7-92062 (1995-04-01), None
patent: 8-5528 (1996-01-01), None
patent: 9-283496 (1997-10-01), None
patent: 11-329331 (1999-11-01), None
patent: 2000-21346 (2000-01-01), None
patent: 2000-036276 (2000-02-01), None
patent: 2001-084951 (2001-03-01), None
patent: 2002-29874 (2002-01-01), None
patent: 2002-298774 (2002-10-01), None
patent: 2003-142021 (2003-05-01), None
patent: 2004-228076 (2004-08-01), None
patent: WO 99/05506 (1999-02-01), None
U.S. Appl. No. 11/189,901, filed Jul. 27, 2005, Koichiro Takeuchi, et al.
Japanese Office Action issued in Japanese Patent Application No. JP 2004-312703 dated May 19, 2009.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Charged particle beam apparatus and sample manufacturing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charged particle beam apparatus and sample manufacturing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charged particle beam apparatus and sample manufacturing method will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2649369

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.