Charged particle beam apparatus

Details Charged particle beam apparatus Charged particle beam apparatus

2006-07-25

2006-07-25

Wells, Nikita (Department: 2881)

Radiant energy

Inspection of solids or liquids by charged particles

Electron probe type

C250S306000, C250S307000, C250S309000, C324S754120

Reexamination Certificate

active

07081625

ABSTRACT:
The object of the present invention is to transmit the position information of a defect that has been specified by means of a circuit pattern inspection apparatus quickly and precisely so that the position information is efficiently used in another apparatus. Marking is carried out on the peripheral area of the defect by use of a charged particle beam irradiation mechanism of the inspection apparatus. The marking realizes sharing of the defect position information with another apparatus. The marking technique includes deposition of a deposit and charging up by means of irradiation of a charged particle beam. The marking in the inspection apparatus allows the defect position information to be transmitted to another apparatus more correctly and easily, and as a result, analysis accuracy is improved and analysis time is shortened.

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Kurosawa, et al., Establishment of the high throughput analysis method of the internal defect in a semiconductor device., pp. 7-12 (2002), Japan.

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