Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1997-03-27
1999-08-03
Nguyen, Kiet T.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
25049222, H01J 37304
Patent
active
059328843
ABSTRACT:
A charge-beam exposure system is provided, which is able to adjust the current density of a charged beam according to the opening-area ratio of shaping apertures without the use of current-density adjusting apertures. The system includes a first aperture formed on a first aperture mask and second apertures formed on a second aperture mask. A current-density controller controls the current density of the charged beam. A second-aperture selector selects one of the second apertures. An exposure-time controller controls the exposure time of a specimen to the charged beam. A current detector detects an electric current generated by the charged beam. A correction data generator generates a correction data to limit the electric current to a preset value or less. The charged beam passes through the first aperture to have a shape of the first aperture. The charged beam having the shape of the first aperture passes through a selected one of the second apertures to have a composite shape of the first aperture and the selected one of the second apertures. The charged beam having the composite shape is irradiated onto a specimen to form an image of the composite shape.
REFERENCES:
patent: 5334282 (1994-08-01), Nakayama et al.
Yamashita et al., "Resolution analysis in electron-beam cell projection lithography system", J. Vac. Sci. Technol., vol. B 13, No. 6, Nov./Dec. 1995, pp. 2473-2477.
Yamashita et al., "Coulomb Interaction Effect in Cell Projection Lithography", Digest of Papers of the 8th International Microprocess Conference, 1995, pp. 202-204.
Matsuzaka et al., "Study of EB Cell Projection Lithography (I): Electron Optics", Extended Abstracts of the 50th Autumn Meeting of the Japan Society of Applied Physics, 27a-K-6, 1989, pp. 452.
Nakayama et al., "Study of EB Cell Projection Lithography (II): Fabrication of Si Aperture", Extended Abstracts of the 50th Autumn Meeting of the Japan Society of Applied Physics, 27a-K-7, 1989, p. 452.
NEC Corporation
Nguyen Kiet T.
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