Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-22
2006-08-22
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000
Reexamination Certificate
active
07095078
ABSTRACT:
In a charge trapping memory cell, programming occurs by trapping hot electrons from the channel region in a storage layer. The erasure occurs by Fowler-Nordheim tunneling of the electrons through the lower boundary layer to source or drain or preferably through the upper boundary layer into the gate electrode. The boundary layers are preferably aluminum oxide.
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Korotkov A, et al., “Resonant Fowler-Nordhelm Tunneling through Layered Tunnel Barriers and its Possible Applications,” Techn. Dig. IDEM 1999, pp. 223-226.
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Huynh Andy
Slater & Matsil L.L.P.
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