Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Louie, Wai-Sing (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S310000, C257S321000, C257S324000, C257SE27078
Reexamination Certificate
active
07999302
ABSTRACT:
A memory cell comprising: a semiconductor substrate with a surface with a source region and a drain region disposed below the surface of the substrate and separated by a channel region; a tunneling barrier dielectric structure with an effective oxide thickness of greater than 3 nanometers disposed above the channel region; a conductive layer disposed above the tunneling barrier dielectric structure and above the channel region; a charge trapping structure disposed above the conductive layer and above the channel region; a top dielectric structure disposed above the charge trapping structure and above the channel region; and a top conductive layer disposed above the top dielectric structure and above the channel region are described along with devices thereof and methods for manufacturing.
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Haynes Beffel & Wolfeld LLP
Louie Wai-Sing
Macronix International Co. Ltd.
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