Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-03-27
2008-08-05
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S335000, C438S301000, C438S306000
Reexamination Certificate
active
07408222
ABSTRACT:
A charge-trapping device includes a field effect transistor, which has source and drain regions. The source and drain regions have a dopant concentration profile, which has a gradient each in a vertical and a lateral direction with respect to a surface of a semiconductor substrate. The gradient in the lateral direction towards a depletion region of the transistor is larger than the gradient in the vertical direction towards a well region.
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Hagenbeck Rainer
Isler Mark
Ludwig Christoph
von Kamienski Elard Stein
Infineon - Technologies AG
Picardat Kevin M
Slater & Matsil L.L.P.
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