Charge trapping device and method of producing the charge...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S335000, C438S301000, C438S306000

Reexamination Certificate

active

07408222

ABSTRACT:
A charge-trapping device includes a field effect transistor, which has source and drain regions. The source and drain regions have a dopant concentration profile, which has a gradient each in a vertical and a lateral direction with respect to a surface of a semiconductor substrate. The gradient in the lateral direction towards a depletion region of the transistor is larger than the gradient in the vertical direction towards a well region.

REFERENCES:
patent: 5155369 (1992-10-01), Current
patent: 5374836 (1994-12-01), Vinal et al.
patent: 5912843 (1999-06-01), Jeng
patent: 6417081 (2002-07-01), Thurgate
patent: 6559016 (2003-05-01), Tseng et al.
patent: 6570233 (2003-05-01), Matsumura
patent: 6686242 (2004-02-01), Willer et al.
patent: 2004/0102026 (2004-05-01), Wong et al.
patent: 2005/0062102 (2005-03-01), Dudek et al.
patent: 2005/0098817 (2005-05-01), Hsu et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Charge trapping device and method of producing the charge... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge trapping device and method of producing the charge..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge trapping device and method of producing the charge... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4014345

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.