Charge trapping device

Details Charge trapping device Charge trapping device

2006-06-27

2006-06-27

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S317000

Reexamination Certificate

active

07067873

ABSTRACT:
A silicon based semiconductor device and method uses charge trapping to alter a density of carriers available in a channel of a field effect transistor (FET) for conduction. The charge trapping mechanism can be controlled by a source-drain bias voltages applied to the FET, so that the device can be turned off through a control mechanism separate from a gate voltage.

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