Charge trap-type 3-level non-volatile semiconductor memory...

Details Charge trap-type 3-level non-volatile semiconductor memory... Charge trap-type 3-level non-volatile semiconductor memory...

2008-03-11

2008-03-11

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185030, C365S185180

Reexamination Certificate

active

07342827

ABSTRACT:
Disclosed herein is a charge trap-type 3-level non-volatile semiconductor memory device and method of driving the same. The charge trap-type 3-level non-volatile semiconductor memory device includes a memory array including a plurality of memory elements, each capable of storing data in at least two charge trap regions depending on the direction of current flow, and a page buffer driven to map three data bits to threshold voltage groups of the two charge trap regions. The charge trap-type non-volatile semiconductor memory device has charge trap regions each storing 1.5 bits of data. That is, a single memory element has charge trap regions for storing 3 bits of data, thereby improving device integration while maintaining a high operating speed during programming and reading operations.

REFERENCES:
patent: 5966326 (1999-10-01), Park et al.
patent: 6490204 (2002-12-01), Bloom et al.
patent: 6649972 (2003-11-01), Eitan
patent: 6853587 (2005-02-01), Forbes
patent: 7130215 (2006-10-01), Yeh
patent: 7218554 (2007-05-01), Hsu et al.
patent: 2007/0195597 (2007-08-01), Park et al.
patent: 2005-0040667 (2005-05-01), None
English language abstract of Korean Publication No. 2005-0040667.

Affiliated with

Also associated with

Rating

Charge trap-type 3-level non-volatile semiconductor memory... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge trap-type 3-level non-volatile semiconductor memory..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge trap-type 3-level non-volatile semiconductor memory... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2809316