Charge-trap flash memory device with reduced erasure stress...

Details Charge-trap flash memory device with reduced erasure stress... Charge-trap flash memory device with reduced erasure stress...

2009-01-20

2011-12-27

Luu, Pho M (Department: 2824)

Static information storage and retrieval

Floating gate

Particular connection

C365S185200, C365S185110, C365S185170, C365S185180, C365S200000

Reexamination Certificate

active

08085592

ABSTRACT:
Operation methods of charge-trap flash memory devices having an unused memory cell for data storage and a normal memory cell used for data storage are discussed. The operation method may include selecting the unused memory cell, and programming the unused memory cell to have a predetermined threshold voltage. The charge-trap flash memory device may thus be provided with improved reliability by interrupting erasure stress to unused memory cells.

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