Charge-transfer sense amplifier for dram and operating method th

Details Charge-transfer sense amplifier for dram and operating method th Charge-transfer sense amplifier for dram and operating method th

1988-07-01

1990-08-07

Gossage, Glenn A.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365203, 307530, G11C 700

Patent

active

049473760

ABSTRACT:
A charge-transfer sense amplifier which is connected to a pair of bit lines includes a flip-flop type sense amplifier comprising cross-coupled transistors, a pair of charge transfer elements provided between the flip-flop type sense amplifier and the pair of bit lines, and elements for precharging nodes between the charge transfer elements and the flip-flop type sense amplifier to an "H" level. There is additionally provided a pair of coupling capacitances for capacitively coupling respective gates of the charge transfer elements to a pair of bit lines in a cross-coupling configuration. A circuit device for precharging respective gates of the charge transfer elements brings the charge transfer elements into substantially a cut-off state. This configuration enables the charge-transfer sense amplifier and a one-half Vcc precharge scheme to be effectively combined.

REFERENCES:
patent: 4039861 (1977-08-01), Heller et al.
patent: 4262341 (1981-04-01), Mogi et al.
patent: 4802130 (1989-01-01), Soneda
Tolley et al., "72-K RAM Stands up to Soft and Hard Errors", Electronics, Jun. 16, 1982, pp. 147-151.
Crabtree et al., "Charge-Sensitive Sense Amplifier", IBM Tech. Disc. Bull., vol. 21, No. 9, Feb. 1979, pp. 3707-3709.
Schuster, "High Performance Sense Amplifier Circuit", IBM Tech. Disc. Bull., vol. 21, No. 2, Jul. 1978, pp. 882-883.
IEEE J. of Sol. St. Circuits: "High Sensitivity Charge-Transfer Sense Amplifier", by Lawrence G. Heller et al., vol. SC-11, No. 5, Oct. 1974, pp. 596-601.

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