Charge transfer apparatus

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S432000, C257S448000, C257S462000

Reexamination Certificate

active

06876019

ABSTRACT:
To transfer signal charges at high speed with small noise, there is provided a charge transfer apparatus including a semiconductor substrate of one conductivity type, a charge transfer region of a conductivity type opposite to that of the semiconductor substrate that is formed in the semiconductor substrate and joined to the semiconductor substrate to form a diode, a signal charge input portion which inputs a signal charge to the charge transfer region, a signal charge output portion which accumulates the signal charge transferred from the charge transfer region, and a plurality of independent potential supply terminals which supply a potential gradient to the semiconductor substrate, wherein the signal charge in the charge transfer region is transferred by the potential gradient formed by the plurality of potential supply terminals.

REFERENCES:
patent: 4765149 (1988-08-01), Shiga et al.
patent: 4912560 (1990-03-01), Osawa et al.
patent: 4962412 (1990-10-01), Shinohara et al.
patent: 5008206 (1991-04-01), Shinohara et al.
patent: 5053872 (1991-10-01), Matsunaga
patent: 5146339 (1992-09-01), Shinohara et al.
patent: 5280358 (1994-01-01), Yushiya et al.
patent: 5502318 (1996-03-01), Hynecek
patent: 5523609 (1996-06-01), Fukusho
patent: 5986297 (1999-11-01), Guidash et al.
patent: 6051857 (2000-04-01), Miida
patent: 6362498 (2002-03-01), Abramovich
patent: 54-150946 (1979-11-01), None
patent: 62296463 (1987-12-01), None
patent: 63-38866 (1988-02-01), None
patent: 2-63314 (1990-03-01), None
Yusa, Atsushi, et al., SIT Image Sensor: Design Considerations and Characteristics, IEEE Transactions on Electron Devices, vol. ED-33, No. 6, Jun. 1986. IEEE Log No. 8608259.
Tanaka, Nobuyoshi, A 310K Pixel Bipolar Imager (BASIS), IEEE Transactions on Electron Devices, V I. 37, No. 4, Apr. 1990. IEEE Log No. 8933925.
Mendis, Sunetra K., et al., A 128 ×128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems, Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institut of Technology, 48000 Oak Drive, Pasadena, CA 91109. International Electron Devices Meeting, Wash., D.C., Dec. 5-8, 1993.

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