Charge storage for sensing operations in a DRAM

Details Charge storage for sensing operations in a DRAM Charge storage for sensing operations in a DRAM

1996-09-20

1998-06-02

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

365207, 365206, G11C 1124

Patent

active

057611122

ABSTRACT:
A DRAM has a sensing circuit which includes an on-chip capacitors having a total capacitance greater than about 35% of the total capacitance of the bit lines. The on-chip capacitors are coupled to a power line of the sense amplifiers and stabilizes a power supply voltage to prevent voltage drop and noise during the large sensing currents for a read/refresh cycle. A read/refresh cycle in accordance with an embodiment of the invention includes precharging bit lines and the on-chip capacitors before connecting memory transistors to the bit lines and connecting power to the sense amplifiers. Capacitors can be formed in any available space in the integrated circuit particularly in space under metal bus lines in peripheral circuitry surrounding a memory array.

REFERENCES:
patent: 5596521 (1997-01-01), Tanaka et al.

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