Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2011-06-14
2011-06-14
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S149000
Reexamination Certificate
active
07961492
ABSTRACT:
A charge storage circuit includes a plurality of word lines, a plurality of bit lines, and a plurality of memory cells connected to a corresponding word line among the word lines and connected to a corresponding bit line among the bit lines. Each of the memory cells includes a transistor turned on in response to a predetermined voltage of the corresponding word line and connected to the corresponding bit line, and a capacitor having one end connected to the transistor and the other end connected to the corresponding word line.
REFERENCES:
patent: 6172897 (2001-01-01), Shuto
patent: 1020060083568 (2006-07-01), None
patent: 1020070042249 (2007-04-01), None
Notice of Allowance issued from Korean Intellectual Property Office on Oct. 28, 2009.
Hoang Huan
Hynix / Semiconductor Inc.
IP & T Group LLP
Lappas Jason
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