Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-07-21
1999-09-28
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
327536, H01L 2348, H01L 2702
Patent
active
059593237
ABSTRACT:
A tub structure underlying a first well in a semiconductor integrated circuit is charge pumped to increase electron collection efficiency in the tub structure. A charge pumping circuit applies the biasing voltage via a second well. The current in the tub structure is monitored to determine when to pump charge into the tub structure. The pumping biases the n-tub to voltages as high as twice the supply voltage magnitude, (2V.sub.cc). The tub current is compared to a minimum current threshold and a maximum current threshold. The charge pump is disabled when the tub current exceeds the maximum threshold and is turned on before the tub current goes below the minimum threshold. The maximum threshold is for keeping the tub structure from exhibiting an undesirable standby current. The minimum threshold is to keep the tub structure biased enough to achieve a desired electron collection efficiency.
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Guay John
Micro)n Technology, Inc.
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