Charge pump semiconductor device

Details Charge pump semiconductor device Charge pump semiconductor device

1996-08-02

1998-05-26

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257401, 363 60, H01L 2978

Patent

active

057570434

ABSTRACT:
A channel region is enclosed by a source region or drain region. A plurality of the resulting MOS transistors are diode connected in series to each other. The MOS transistors are formed in the well regions. As a result of this, it is possible to prevent breakdown at a time when a substrate bias is being applied and a resulting change in the threshold value due to the substrate bias effect.

REFERENCES:
patent: 4684967 (1987-08-01), Taylor, Sr. et al.
patent: 4878120 (1989-10-01), Matsumoto et al.
patent: 4969023 (1990-11-01), Svedberg

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