Charge pump device

Details Charge pump device Charge pump device

2005-08-09

2005-08-09

Kennedy, Jennifer M. (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S368000, C257S369000, C257S371000, C257S373000

Reexamination Certificate

active

06927442

ABSTRACT:
A semiconductor device for a charge pump device suitable for providing large current capacity and preventing a latch up from occurring is offered. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and P-type well regions are formed in the second epitaxial silicon layer. P+-type buried layers abutting on bottoms of the P-type well regions and N+-type buried layers abutting on bottoms of the P+-type buried layers and electrically isolating the P-type well regions from the single crystalline silicon substrate are formed. An MOS transistor is formed in each of the P-type well regions and a drain layer of the MOS transistor and each of the P-type well regions are electrically connected.

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