Charge pump device

Details Charge pump device Charge pump device

2005-04-19

2005-04-19

Wille, Douglas (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S369000, C257S371000, C257S373000

Reexamination Certificate

active

06881997

ABSTRACT:
In a charge pump device, occurrence of a latch up can be prevented and current capacity can be increased. An N-type epitaxial silicon layer is formed on a P-type single crystalline silicon substrate, P-type well regions are formed in the N-type epitaxial silicon layer separated from each other, and P-type lower isolation layers and P-type upper isolation layers are formed between the P-type well regions. Then a charge transfer MOS transistor is formed in each of the P-type well regions. The P-type single crystalline silicon substrate is biased to a ground potential or a negative potential.

REFERENCES:
patent: 5643820 (1997-07-01), Williams et al.
patent: 6570229 (2003-05-01), Harada
patent: 20030173609 (2003-09-01), Kaneko et al.
patent: 1991-0006672 (1991-08-01), None
patent: 97-005416 (1997-04-01), None

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