Charge pump device

Details Charge pump device Charge pump device

2005-03-08

2005-03-08

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S371000, C257S335000, C257S373000

Reexamination Certificate

active

06864525

ABSTRACT:
A latch up in a charge pump device is prevented as well as a withstand voltage of an MOS transistor used in the charge pump device is increased with this invention. A first and a second N-type epitaxial silicon layers are stacked on a P-type single crystalline silicon substrate, and P-type well regions are formed in the second epitaxial silicon layer separated from each other. A P-type isolation layer is formed between the P-type well regions. A P+-type buried layer is formed abutting on a bottom of each of the well regions, an N+-type buried layer is formed abutting on a bottom of the P+-type buried layer, and a transistor for charge transfer is formed in each of the P-type well regions.

REFERENCES:
patent: 5643820 (1997-07-01), Williams et al.
patent: 6570229 (2003-05-01), Harada

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