Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1999-03-29
2000-03-14
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
307110, 327390, 327536, 327537, 363 59, 363 60, H01L 27108, H01L 2976, H01L 2994, H01L 31119
Patent
active
060376228
ABSTRACT:
A semiconductor integrated circuit includes a first charge pumping circuit connected to an input node. The first charge pump circuit includes a plurality of first driving transistors and charges an input voltage at the input node to a control voltage. A second charge pumping circuit includes a plurality of second driving transistors that each receive the control voltage from the first charge pump. The received control voltage controls the driving of the second transistors when charging an output node to an output voltage. To eliminate body effects, the semiconductor integrated circuit further includes a plurality of body transistors that connect the source and body terminals of the driving transistors.
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Chang Kai-Hsun
Lin Hong-chin
Wong Shyh-Chyi
Ngo Ngan V.
Winbond Electronics Corporation
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