Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1999-07-07
2000-04-25
Hoang, Huan
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
36518909, 365226, 327536, G11C 700
Patent
active
060551933
ABSTRACT:
Circuits to convert an input voltage supply to an output voltage supply having a different magnitude or polarity. The circuits include a capacitor having a first terminal and a second terminal, a first switch coupled to the first terminal of the capacitor, and a second switch. The circuits further include a first node coupled between the second terminal of the capacitor and the second switch, and a third switch having a first terminal coupled to the first node and a second terminal coupled to a second node. The first switch is adapted to couple the first terminal of the capacitor to the input supply voltage during a fill state and a second voltage level during a dump state. The second switch is adapted to couple the first node to a third voltage level during the fill state and present a high impedance to the first node during the dump state. The third switch is adapted to dump a charge from the first node to the second node during the dump state, thereby producing an output voltage at the second node.
REFERENCES:
patent: 4161791 (1979-07-01), Leach
patent: 4249194 (1981-02-01), Rogers
patent: 4467450 (1984-08-01), Kuo
patent: 4667312 (1987-05-01), Duong et al.
patent: 5266821 (1993-11-01), Chern et al.
patent: 5665995 (1997-09-01), Hsue et al.
patent: 5760637 (1998-06-01), Wong et al.
Streetman, B.G., "Solid State Electronic Devices", 3rd Edition, Prentice Hall Series in Solid State Physical Electronics, Nick Holonyak, Jr., Series Editor, (1990).
Wolf, S., "Silicon Processing for the VLSI ERA vol. 2: Process Integration", Lattice Press, Sunset Beach, CA, 392-395, (1990).
Ma Manny K. F.
Manning Troy A.
Hoang Huan
Micro)n Technology, Inc.
LandOfFree
Charge pump circuits and devices containing such does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Charge pump circuits and devices containing such, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge pump circuits and devices containing such will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-998978