Charge pump circuit for a substrate voltage generator

Details Charge pump circuit for a substrate voltage generator Charge pump circuit for a substrate voltage generator

1992-08-04

1993-11-30

Kwon, John T.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307264, 3072968, G05F 316

Patent

active

052668428

ABSTRACT:
A charge pump circuit of a substrate voltage generator used for a semiconductor memory device, comprising a first transistor whose channel is connected between a first pumping capacitor and a substrate node and a second transistor whose channel is connected between a second pumping capacitor and the substrate node, whereby a negative voltage generated by the first pumping capacitor in response to the substrate voltage and clock signals turns on the second transistor which performs charge pumping from the substrate node. Thus the substrate voltage is made to have sufficient coupling-down so as to stabilize the substrate voltage even with a low source voltage.

REFERENCES:
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patent: 4766415 (1988-08-01), Dielacher
patent: 4794278 (1988-12-01), Vajdic
patent: 4982118 (1991-01-01), Lloyd
patent: 5029282 (1991-07-01), Ito
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patent: 5132555 (1992-07-01), Takahashi
patent: 5157278 (1992-10-01), Min et al.
patent: 5212415 (1993-05-01), Murakami et al.

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