Charge pump

Details Charge pump Charge pump

1996-08-08

1998-10-27

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257537, 365149, 365222, 36518901, 36518909, H01L 2704

Patent

active

058280952

ABSTRACT:
Selected transistors in a charge pump circuit have their associated well regions tied to a capacitor electrode. As a result, the body effect in these devices is reduced, and, consequently, the threshold voltage is reduced as well. With a lower threshold voltage, these transistors allow the charge pump to quickly generate a voltage higher than the positive power supply voltage or a negative substrate bias voltage. In addition, the metal-insulator-semiconductor (MIS) capacitors in the charge pump preferably have their source/drain regions tied to an associated well region, thereby shorting the source/drain/well region junction. Thus, parasitic capacitances associated with these MIS capacitors is significantly reduced, further increasing the speed of the charge pump circuit.

REFERENCES:
patent: 4468798 (1984-08-01), Riebeek
patent: 5023465 (1991-06-01), Douglas et al.
patent: 5126590 (1992-06-01), Chern
patent: 5394320 (1995-02-01), Blodgett
patent: 5394365 (1995-02-01), Tsukikawa
patent: 5493249 (1996-02-01), Manning
patent: 5544102 (1996-08-01), Tobita et al.
patent: 5673232 (1997-09-01), Furutani

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