Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-07-16
1994-05-24
Ngo, Ngan
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257317, 257321, H01L 2702, H01L 2968, H01L 2978
Patent
active
053151453
ABSTRACT:
A unipolar charge monitoring device for use in characterizing semiconductor fabrication equipment and processes includes a semiconductor substrate of one conductivity type, a source region and a drain region formed in first and second spaced surface regions of opposite conductivity type in the substrate with a channel region between the source region and the drain region, a control gate spaced from and in alignment with the channel region, a floating gate between and spaced from said control gate and the channel region, a charge collection electrode above and electrically connected to the control electrode, and a diode connecting the charge collection electrode to the substrate whereby the charge collection electrode collects charge of only one potential. In one embodiment, the unipolar charge monitoring device further includes a conductive electrode spaced from the charge collecting electrode and ohmically connected to the substrate for monitoring surface charge dissipation. In other embodiments, the unipolar charge monitoring device floating gate is separated from the source region by a tunnel oxide, and a metal layer is spaced from the charge collection electrode and overlapping a portion of the charge collection electrode whereby the unipolar charge monitoring device monitors above-the-wafer charge conduction.
REFERENCES:
patent: 5065201 (1991-11-01), Yamauchi
Lukaszek et al., "Charm: A New Wafer Surface Charge Monitor," TechCon '90, San Jose.
Lukaszek et al., "Measurement of Process Induced Wafer Potentials," Ion Implantation Technology-92, copyright 1993, pp. 645-650.
Lukaszek et al., "Charging Studies Using the CHARM2 Wafer Surface Charging Monitor," Nuclear Instruments and Methods in Physics Research B74 (1993), pp. 301-305.
Lukaszek, "EEPROM-Based Charging-Effects Sensors for Plasma Etching and Ion Implantation," 1992 WLR Final Report, Oct. 25-28, 1992, pp. 101-105.
Lukaszek et al. "CHARM2: Towards an Industry-Standard Wafer Surface-Charge Monitor," Paper for the Center for Integrated Systems, Stanford University, Stanford, Calif. 94305 Sep. 30-Oct. 1992.
Board of Trustees of the Leland Stanford Junior University
Ngo Ngan
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