Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1993-05-07
1996-11-05
Anderson, Bruce C.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250397, H01J 3730
Patent
active
055720382
ABSTRACT:
A charge measuring system for determining implantation dose in a PI.sup.3 system with means to compensate for current in the charge sensor which does not arise from positive ions arriving on the wafer.
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Article by X. Y. Qian, et al., entitled "Sub-100nm P+/N Junction Formation Using Plasma Immersion Ion Implantation", published in Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol. B55, No. 1-4, in Apr. 1991.
Article by Nathan W. Cheung, entitled "Plasma Immersion Ion Implantation for ULSI Processing", published in VII. Trends & Applications, in 1991, pp. 811-820.
Memorandum No. UCB/ERL M90/84 by X. Y. Qian, et al., entitled "Plasma Immersion Ion Implantation for VLSI Fabrication", published by College of Engineering, University of California, Berkeley, on Sep. 13, 1990.
Article by X. Y. Qian, et al., entitled "Conformal Implantation for Trench Doping with Plasma Immersion Ion Implantation", published in Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with Materials and Atoms), vol. B55, No. 1-4, pp. 898-901, in Apr. 1991.
Article by X. Y. Qian, et al., entitled "Plasma Immersion Pd Ion Implantation Seeding Pattern Formation for Selective Electroless Cu Plating", published in Nuclear Instruments & Methods in Physics Research, Section B (Beam Interactions with materials and Atoms), vol. B55, No. 1-4, pp. 888-892, in Apr. 1991.
Cooper, III Charles B.
Felch Susan B.
Sheng Terry T.
Van Wagoner Charles E.
Anderson Bruce C.
Fisher Gerald M.
Varian Associates Inc.
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