Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-31
2006-10-31
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C361S056000
Reexamination Certificate
active
07129545
ABSTRACT:
An SOI integrated circuit includes ESD protection on an SOI chip. A first power domain and a second power domain are provided in the SOI chip. In one embodiment, a charge modulation network in the SOI chip between the first power domain and the second power domain mitigates accumulation of electrical charge in an electrically isolated region of the SOI chip. In another embodiment, an ESD protection device in the SOI chip electrically connects the first power domain and the second power domain via a low metal layer to provide a discharge path for accumulated charge.
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Cain David A.
Gambino Jeffrey P.
Rohrer Norman J.
Seitzer Daryl M.
Voldman Steven H.
Dickey Thomas L.
International Business Machines - Corporation
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