Charge modulated device

Details Charge modulated device Charge modulated device

1994-06-23

1995-07-04

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257443, H01L 2702, H01L 2714, H01L 3100, H01L 2710

Patent

active

054303125

ABSTRACT:
A sensitivity of light of long wavelength in a charge modulated device can be improved and a capability for storing photogenerated electric charges in a charge modulated pixel transistor is increased. In a charge modulated device using charge modulated pixel transistors, a charge modulated pixel transistor (31) includes in its bulk formed under the gate a charge accumulation region (35) for storing photoelectrically-converted holes formed of a P.sup.30 semiconductor region (37) and a P semiconductor region (38) formed under the P.sup.+ semiconductor region (37). This charge accumulation region (35) has an impurity profile in which an impurity concentration is decreased in the depth direction.

REFERENCES:
patent: 4901129 (1990-02-01), Hynecek
patent: 5317174 (1994-05-01), Hynecek

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