Charge mapping memory array formed of materials with mutable...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S149000

Reexamination Certificate

active

08040722

ABSTRACT:
A memory cell array including a data line; a capacitor; and a transistor coupled between the data line and the capacitor. At least one of the capacitor and the transistor includes a material with a mutable electrical characteristic.A memory cell array including a first transistor coupled between a first node, a second node, and a third node; and a second transistor coupled between the second node and a fourth node. The first transistor includes a material with a mutable electrical characteristic.

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