Charge-free low-temperature method of forming thin...

Details Charge-free low-temperature method of forming thin... Charge-free low-temperature method of forming thin...

2006-11-21

2008-07-01

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S041000, C438S022000, C438S222000, C438S226000, C438S476000, C438S481000, C257SE21001, C257SE21092, C257SE21093

Reexamination Certificate

active

07393762

ABSTRACT:
A method of forming a nanostructure at low temperatures. A substrate that is reactive with one of atomic oxygen and nitrogen is provided. A flux of neutral atoms of at least one of nitrogen and oxygen is generated within a laser-sustained-discharge plasma source and a collimated beam of energetic neutral atoms and molecules is directed from the plasma source onto a surface of the substrate to form the nanostructure. The energetic neutral atoms and molecules in the plasma have an average kinetic energy in a range from about 1 eV to about 5 eV.

REFERENCES:
patent: 4780608 (1988-10-01), Cross et al.
patent: 4996187 (1991-02-01), Chai
patent: 5271800 (1993-12-01), Koontz et al.
patent: 5858471 (1999-01-01), Ray et al.
patent: 6212047 (2001-04-01), Payne et al.
patent: 6869671 (2005-03-01), Crouse et al.
patent: 2004/0131718 (2004-07-01), Chou et al.
patent: 2005/0146078 (2005-07-01), Chou et al.
patent: 2006/0044682 (2006-03-01), Le et al.
Mueller et al., “Multicolor Light-Emitting Diodes Based on Semiconductor Nanocrystals Encapsulated in GaN Charge Injection Layers,” Nano Letters, 2005, vol. 5, No. 6, pp. 1039-1044.

Affiliated with

Also associated with

Rating

Charge-free low-temperature method of forming thin... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Charge-free low-temperature method of forming thin..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Charge-free low-temperature method of forming thin... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3967435