Charge effect and electrostatic damage prevention method on...

Details Charge effect and electrostatic damage prevention method on... Charge effect and electrostatic damage prevention method on...

2005-03-01

2005-03-01

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000

Reexamination Certificate

active

06861179

ABSTRACT:
Secondary mask pattern elements are used to interconnect isolated sub-patterns of a mask pattern. The interconnection of the isolated sub-patterns prevents different electrostatic charge accumulation on the various isolated sub-patterns. This prevents mask damage due to electrostatic discharge, problems with mask inspection, and problems with mask repair due to different electrostatic charge accumulation on various isolated sub-patterns. The mask is used to transfer the mask pattern to a layer of photosensitive material. The width of the secondary sub-pattern elements are sufficiently small relative to the wavelength of the light used to transfer the mask pattern to the photosensitive material that the secondary sub-pattern elements are not transferred to the photosensitive material.

REFERENCES:
patent: 5989754 (1999-11-01), Chen et al.
patent: 6140021 (2000-10-01), Nakasuji et al.
patent: 6153340 (2000-11-01), Nakasuji
patent: 6165693 (2000-12-01), Lin et al.
patent: 6265121 (2001-07-01), Lin

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